Trapping/detrapping surface states are also considered to determine device drive current and trans-conductance expressions. An aluminum mole fraction graded doping profile in bottom barrier layer has been used for bottom channel sheet carrier density. The model analyses sheet charge density and finaly current density in each of the top and bottom channels using effective device threshold expressions based on spontaneous and piezoelectric polarization dependent two dimensional electron gas (2-DEG). In this paper we present 2-D analytical model for I-V characteristics and transconductance of dual channel AlGaN/GaN Modulation Doped Field Effect Transistor (DC-MODFET) to demonstrate the current-voltage as well as transfer characteristics of the device structure under different bias conditions.
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